| The roadblocks to vertical GaN remain, and the fabricators are cautious when it comes to GaN on GaN technologies, even though the benefits would be wide-ranging. The drawbacks are substantial. Growing a Gallium Nitride crystal is difficult, and time-consuming. The process today is better served on a substrate like Silicon Carbide. In order to estimate what it would take to produce vertical GaN products at scale, there would need to be a reckoning of time. Time-to-market is longer, time to deliver products is farther out into the future, and a way to reduce the growth difficulties is nowhere in sight. The benefits are higher performance in a smaller space, and greater efficiency and reliability. | 